2N7000 datasheet(1/5 Pages) UTC

No. de pieza	2N7000

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UTC 2N7000

MOSFET

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-064,A

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC 2N7000 has been designed to minimize

on-state resistance while provide rugged, reliable, and fast

switching performance. It can be used in most applications

requiring up to 400mA DC and can deliver pulsed currents

up to 2A. The product is particularly suited for low voltage,

low current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications

FEATURES

*High density cell design for low RDS(ON)

*Voltage controlled small signal switch

*Rugged and reliable

*High saturation current capability

TO-92

1

1: SOURCE 2: GATE 3: DRAIN

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage(RGS≤1MΩ)

VDGR

60

V

Gate -Source Voltage-Continuous

-Non Repetitive (tp<50

µs)

VGSS

±20

±40

V

Maximum Drain Current-Continuous

-Pulsed

ID

115

800

mA

Maximum Power Dissipation

Derated above 25

°C

PD

400

3.2

mW

mW/

°C

Operating and Storage Temperature Range

TJ,TSTG

-55 to +150

°C

Maximum Lead Temperature for Soldering Purposes, 1/16” from Case

for 10 Seconds

TL

300

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance, Junction-to-Ambient

RθJA

312.5

°C/W

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