MC74LVXU04D datasheet(4/6 Pages) ONSEMI

No. de pieza	MC74LVXU04D

Descripción Electrónicos	Hex Inverter(Unbuffered)

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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MC74LVXU04

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DC ELECTRICAL CHARACTERISTICS

VCC

TA = 25°C

TA = −40 to 85°C

Symbol

Parameter

Test Conditions

VCC

V

Min

Typ

Max

Min

Max

Unit

VIH

High−Level Input Voltage

2.0

3.0

3.6

1.5

2.0

2.4

1.5

2.0

2.4

V

VIL

Low−Level Input Voltage

2.0

3.0

3.6

0.5

0.8

0.5

0.8

V

VOH

High−Level Output Voltage

(Vin = VIH or VIL)

IOH = −50 mA

IOH = −4 mA

2.0

3.0

1.9

2.9

2.58

2.0

3.0

1.9

2.9

2.48

V

VOL

Low−Level Output Voltage

(Vin = VIH or VIL)

IOL = 50 mA

IOL = 4 mA

2.0

3.0

0.0

0.1

0.36

0.1

0.44

V

Iin

Input Leakage Current

Vin = 5.5 V or GND

3.6

±0.1

±1.0

mA

ICC

Quiescent Supply Current

Vin = VCC or GND

3.6

2.0

20.0

mA

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)

TA = 25°C

TA = −40 to 85°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Min

Max

Unit

tPLH,

tPHL

Propagation Delay, Input to

Output

VCC = 2.7V

CL = 15 pF

CL = 50 pF

5.4

7.9

10.1

13.6

1.0

12.5

16.0

ns

VCC = 3.3 ± 0.3V CL = 15 pF

CL = 50 pF

4.1

6.6

6.2

9.7

1.0

7.5

11.0

tOSHL

tOSLH

Output−to−Output Skew

(Note 6)

VCC = 2.7V

CL = 50 pF

VCC = 3.3 ±0.3V CL = 50 pF

1.5

ns

6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.

The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter

guaranteed by design.

CAPACITIVE CHARACTERISTICS

TA = 25°C

TA = −40 to 85°C

Symbol

Parameter

Min

Typ

Max

Min

Max

Unit

Cin

Input Capacitance

4

10

pF

CPD

Power Dissipation Capacitance (Note 7)

18

pF

7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the

no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.

NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 3.3 V, Measured in SOIC Package)

TA = 25°C

Symbol

Characteristic

Typ

Max

Unit

VOLP

Quiet Output Maximum Dynamic VOL

0.3

0.5

V

VOLV

Quiet Output Minimum Dynamic VOL

−0.3

−0.5

V

VIHD

Minimum High Level Dynamic Input Voltage

2.0

V

VILD

Maximum Low Level Dynamic Input Voltage

0.8

V

Figure 2. Switching Waveforms

VCC

GND

50%

50% VCC

A

O

tPHL

tPLH

*Includes all probe and jig capacitance

Figure 3. Test Circuit

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

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