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M74VHC1GT86DTT1G Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza M74VHC1GT86DTT1G
Descripción Electrónicos  2?묲nput Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL?묬ompatible Inputs
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

M74VHC1GT86DTT1G Datasheet(HTML) 2 Page - ON Semiconductor

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MC74VHC1GT86
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
−0.5 to 7.0
−0.5 to VCC + 0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC−88A, TSOP−5
200
mW
qJA
Thermal resistance
SC−88A, TSOP−5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 seconds
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
−65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Derating − SC−88A Package: –3 mW/
°C from 65° to 125°C
− TSOP5 Package: −3 mW/
°C from 65° to 125°C
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
3.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.0
0.0
5.5
VCC
V
TA
Operating Temperature Range
−55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature


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