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BUK9775-55 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BUK9775-55
Descripción Electrónicos  TrenchMOS transistor Logic level FET
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK9775-55 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TrenchMOS
™ transistor
BUK9775-55
Logic level FET
STATIC CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
-
V
voltage
T
j = -55˚C
50
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2
V
T
j = 150˚C
0.6
-
-
V
T
j = -55˚C
-
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
µA
T
j = 150˚C
-
-
100
µA
I
GSS
Gate source leakage current
V
GS = ±5 V; VDS = 0 V
-
0.02
1
µA
T
j = 150˚C
-
5
µA
±V
(BR)GSS
Gate-source breakdown
I
G = ±1 mA;
10
-
-
V
voltage
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 7 A
-
58
75
m
resistance
T
j = 150˚C
-
-
139
m
DYNAMIC CHARACTERISTICS
T
mb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 10 A
5
10
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
500
650
pF
C
oss
Output capacitance
-
110
135
pF
C
rss
Feedback capacitance
-
60
85
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 10 A;
-
10
15
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 Ω
-
4770ns
t
d off
Turn-off delay time
Resistive load
-
28
40
ns
t
f
Turn-off fall time
-
33
45
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
ISOL
R.M.S isolation voltage from all
f = 50-60Hz; sinusoidal waveform;
-
-
2500
V
three terminals to external
R.H.
≤65% clean & dustfree
heatsink
C
ISOL
Capacitance from T2 to
f = 1 MHZ
-
10
-
pF
external heatsink
April 1998
2
Rev 1.000


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