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BC850L-A-AL3-R Datasheet(Hoja de datos) 2 Page - Unisonic Technologies

No. de Pieza. BC850L-A-AL3-R
Descripción  SWITCHING AND AMPLIFIER APPLICATION
Descarga  4 Pages
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Fabricante  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
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BC846-BC850
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-027,C
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
BC846
80
V
BC847 / BC850
50
V
Collector-Base Voltage
BC848 / BC849
VCBO
30
V
BC846
65
V
BC847 / BC850
45
V
Collector-Emitter Voltage
BC848 / BC849
VCEO
30
V
BC846 / BC847
6
V
Emitter-Base Voltage
BC848 / BC849 /
BC850
VEBO
5
V
Collector Current (DC)
Ic
100
mA
SOT-23
310
mW
Collector Dissipation
SOT-323
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Cut-Off Current
ICBO
VCB=30V, IE=0
15
nA
DC Current Gain
hFE
VCE=5.0V, Ic=2.0mA
110
800
Ic=10mA,IB=0.5mA
90
250
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=100mA,IB=5.0mA
200
600
mV
Ic=10mA,IB=0.5mA
700
mV
Collector-Base Saturation Voltage
VBE(SAT)
Ic=100mA,IB=5.0mA
900
mV
VCE=5.0V,Ic=2.0mA
580
660
700
mV
Base-Emitter On Voltage
VBE(ON)
VCE=5.0V,Ic=10mA
720
mV
Current Gain Bandwidth Product
fT
VCE=5.0V,Ic=10mA
f=100MHz
300
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1.0MHz
3.5
6
pF
Input Capacitance
Cib
VEB=0.5V, IC=0, f=1.0MHz
9
pF
BC846/BC847/BC848
2
10
dB
BC849/BC850
1.2
4
dB
BC849
1.4
4
dB
Noise Figure
BC850
NF
VCE=5V, Ic=200µA,
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA,
RG=2KΩ, f=30~15000Hz
1.4
3
dB
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800




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