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BUT11A Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BUT11A
Descripción Electrónicos  Silicon diffused power transistors
Download  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUT11A Datasheet(HTML) 4 Page - NXP Semiconductors

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background image
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT11; BUT11A
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see
Figs 5 and 6
BUT11
400
−−
V
BUT11A
450
−−
V
VCEsat
collector-emitter saturation voltage
BUT11
IC = 3 A; IB = 600 mA; see Figs 7 and 9 −−
1.5
V
BUT11A
IC = 2.5 A; IB = 500 mA; see
Figs 7 and 9
−−
1.5
V
VBEsat
base-emitter saturation voltage
BUT11
IC = 3 A; IB = 0.6 A; see Fig.7
−−
1.3
V
BUT11A
IC = 2.5 A; IB = 0.5 A; see Fig.7
−−
1.3
V
ICES
collector-emitter cut-off current
VCE =VCESMmax; VBE = 0; note 1
−−
1mA
VCE =VCESMmax; VBE = 0; Tj = 125 °C;
note 1
−−
2mA
IEBO
emitter-base cut-off current
VEB =9V; IC =0
−−
10
mA
hFE
DC current gain
VCE =5V; IC = 5 mA; see Fig.10
10
18
35
VCE =5V; IC = 500 mA; see Fig.10
10
20
35
Switching times resistive load (see Fig.12)
ton
turn-on time
BUT11
ICon = 3 A; IBon = −IBoff = 600 mA
−−
1
µs
BUT11A
ICon = 2.5 A; IBon = −IBoff = 500 mA
−−
1
µs
ts
storage time
BUT11
ICon = 3 A; IBon = −IBoff = 600 mA
−−
4
µs
BUT11A
ICon = 2.5 A; IBon = −IBoff = 500 mA
−−
4
µs
tf
fall time
BUT11
ICon = 3 A; IBon = −IBoff = 600 mA
−−
0.8
µs
BUT11A
ICon = 2.5 A; IBon = −IBoff = 500 mA
−−
0.8
µs
Switching times inductive load (see Fig.14)
ts
storage time
BUT11
ICon = 3 A; IBon = 600 mA
1.1
1.4
µs
ICon = 3 A; IBon = 600 mA; Tj = 100 °C
1.2
1.5
µs
BUT11A
ICon = 2.5 A; IBon = 500 mA
1.1
1.4
µs
ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C −
1.2
1.5
µs
tf
fall time
BUT11
ICon = 3 A; IBon = 600 mA
80
150
ns
ICon = 3 A; IBon = 600 mA; Tj = 100 °C
140
300
ns
BUT11A
ICon = 2.5 A; IBon = 500 mA
80
150
ns
ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C −
140
300
ns


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