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BUT12F Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUT12F Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1997 Aug 13 6 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values. handbook, full pagewidth 0 2.0 MGB914 10−1 102 1 IC (A) VBEsat VCEsat (V) 10 0.5 1.5 1.0 (1) (2) (4) (3) (1) VBE; Tj =25 °C. (2) VBE; Tj = 100 °C. (3) VCE; Tj = 100 °C. (4) VCE; Tj =25 °C. IC/IB =5. Fig.8 Base-emitter voltage as a function of collector current; typical values. handbook, full pagewidth 3 IB (A) 1.6 1.4 0.8 0 0.5 VBE (V) MGB911 1.2 1.0 2 2.5 1 1.5 (1) (2) (3) Tj =25 °C. (1) IC =8A. (2) IC =6A. (3) IC =3A. |
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