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CAT28F001_05 Datasheet(Hoja de datos) 4 Page - Catalyst Semiconductor

No. de Pieza. CAT28F001_05
Descripción  1 Megabit CMOS Boot Block Flash Memory
Descarga  18 Pages
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Fabricante  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
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CAT28F001
4
Doc. No. 1078, Rev. I
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified
Limits
Symbol
Parameter
Min.
Max.
Unit
Test Conditions
ILI
Input Leakage Current
±1.0
µAVIN = VCC or VSS
VCC = 5.5V
ILO
Output Leakage Current
±10
µAVOUT = VCC or VSS,
VCC = 5.5V
ISB1
VCC Standby Current CMOS
100
µA
CE = VCC
±0.2V = RP
VCC = 5.5V
ISB2
VCC Standby Current TTL
1.5
mA
CE = RP = VIH, VCC = 5.5V
IPPD
VPP Deep Powerdown Current
1.0
µA
RP = GND
±0.2V
ICC1
VCC Active Read Current
30
mA
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 8 MHz
ICC2(1)
VCC Programming Current
20
mA
VCC = 5.5V,
Programming in Progress
ICC3(1)
VCC Erase Current
20
mA
VCC = 5.5V,
Erase in Progress
IPPS
VPP Standby Current
±10
µAVPP < VCC
200
µAVPP > VCC
IPP1
VPP Read Current
200
µAVPP = VPPH
IPP2(1)
VPP Programming Current
30
mA
VPP = VPPH,
Programming in Progress
IPP3(1)
VPP Erase Current
30
mA
VPP = VPPH,
Erase in Progress
VIL
Input Low Level
–0.5
0.8
V
VOL
Output Low Level
0.45
V
IOL = 5.8mA, VCC = 4.5V
VIH
Input High Level
2.0
VCC+0.5
V
VOH
Output High Level
2.4
V
IOH = 2.5mA, VCC = 4.5V
VID
A9 Signature Voltage
11.5
13.0
V
A9 = VID
IID
A9 Signature Current
500
µAA9 = VID
ICCD
VCC Deep Powerdown Current
1.0
µA
RP = GND
±0.2V
ICCES
VCC Erase Suspend Current
10
mA
Erase Suspended CE = VIH
IPPES
VPP Erase Suspend Current
300
µA
Erase Suspended VPP=VPPH
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.




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