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CAT28F010 Datasheet(PDF) 4 Page - Catalyst Semiconductor

No. de Pieza. CAT28F010
Descripción  1 Megabit CMOS Flash Memory
Descarga  15 Pages
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Fabricante  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
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CAT28F010 Datasheet(HTML) 4 Page - Catalyst Semiconductor

 
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CAT28F010
4
Doc. No. 1019, Rev. D
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Max.
Unit
Test Conditions
ILI
Input Leakage Current
±1
µAVIN = VCC or VSS
VCC = 5.5V, OE = VIH
ILO
Output Leakage Current
±1
µAVOUT = VCC or VSS,
VCC = 5.5V, OE = VIH
ISB1
VCC Standby Current CMOS
100
µA
CE = VCC
±0.5V,
VCC = 5.5V
ISB2
VCC Standby Current TTL
1
mA
CE = VIH, VCC = 5.5V
ICC1
VCC Active Read Current
30
mA
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 6 MHz
ICC2(1)
VCC Programming Current
15
mA
VCC = 5.5V,
Programming in Progress
ICC3(1)
VCC Erase Current
15
mA
VCC = 5.5V,
Erasure in Progress
ICC4(1)
VCC Prog./Erase Verify Current
15
mA
VCC = 5.5V, Program or
Erase Verify in Progress
IPPS
VPP Standby Current
±10
µAVPP = VPPL
IPP1
VPP Read Current
200
µAVPP = VPPH
IPP2(1)
VPP Programming Current
30
mA
VPP = VPPH,
Programming in Progress
IPP3(1)
VPP Erase Current
30
mA
VPP = VPPH,
Erasure in Progress
IPP4(1)
VPP Prog./Erase Verify Current
5
mA
VPP = VPPH, Program or
Erase Verify in Progress
VIL
Input Low Level TTL
–0.5
0.8
V
VILC
Input Low Level CMOS
–0.5
0.8
V
VOL
Output Low Level
0.45
V
IOL = 5.8mA, VCC = 4.5V
VIH
Input High Level TTL
2
VCC+0.5
V
VIHC
Input High Level CMOS
VCC*0.7
VCC+0.5
V
VOH1
Output High Level TTL
2.4
V
IOH = –2.5mA, VCC = 4.5V
VOH2
Output High Level CMOS
VCC–0.4
V
IOH = –400
µA, VCC = 4.5V
VID
A9 Signature Voltage
11.4
13
V
A9 = VID
IID(1)
A9 Signature Current
200
µAA9 = VID
VLO
VCC Erase/Prog. Lockout Voltage
2.5
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.


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