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CAT28F020 Datasheet(PDF) 4 Page - Catalyst Semiconductor

No. de Pieza. CAT28F020
Descripción  2 Megabit CMOS Flash Memory
Descarga  15 Pages
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Fabricante  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
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CAT28F020 Datasheet(HTML) 4 Page - Catalyst Semiconductor

 
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CAT28F020
4
Doc. No. 1029, Rev. C
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified. (See Note 2)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VCC or VSS
±1
µA
VCC = 5.5V, OE = VIH
ILO
Output Leakage Current
VOUT = VCC or VSS,
±1
µA
VCC = 5.5V, OE = VIH
ISB1
VCC Standby Current CMOS
CE = VCC
±0.5V,
100
µA
VCC = 5.5V
ISB2
VCC Standby Current TTL
CE = VIH, VCC = 5.5V
1
mA
ICC1
VCC Active Read Current
VCC = 5.5V, CE = VIL,30
mA
IOUT = 0mA, f = 6 MHz
ICC2(1)
VCC Programming Current
VCC = 5.5V,
15
mA
Programming in Progress
ICC3(1)
VCC Erase Current
VCC = 5.5V,
15
mA
Erasure in Progress
ICC4(1)
VCC Prog./Erase Verify Current
VCC = 5.5V, Program or
15
mA
Erase Verify in Progress
IPPS
VPP Standby Current
VPP = VPPL
±10
µA
IPP1
VPP Read Current
VPP = VPPH
200
µA
IPP2(1)
VPP Programming Current
VPP = VPPH,30
mA
Programming in Progress
IPP3(1)
VPP Erase Current
VPP = VPPH,30
mA
Erasure in Progress
IPP4(1)
VPP Prog./Erase Verify Current
VPP = VPPH, Program or
5
mA
Erase Verify in Progress
VIL
Input Low Level TTL
-0.5
0.8
V
VILC
Input Low Level CMOS
-0.5
0.8
V
VOL
Output Low Level
IOL = 5.8mA, VCC(2) = 4.5V
0.45
V
VIH
Input High Level TTL
2
VCC+0.5
V
VIHC
Input High Level CMOS
VCC*0.7
VCC+0.5
V
VOH1
Output High Level TTL
IOH = -2.5mA, VCC(2) = 4.5V
2.4
V
VOH2
Output High Level CMOS
IOH = -400
µA, VCC(2) = 4.5V VCC-0.4
V
VID
A9 Signature Voltage
A9 = VID
11.4
13
V
IID(1)
A9 Signature Current
A9 = VID
200
µA
VLO
VCC Erase/Prog. Lockout Voltage
2.5
V
Note:
1.
This parameter is tested initially and after a design or process change that affects the parameter.
2.
CAT28F020-90, VCCMIN = 4.75 V.


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