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MC100LVELT22_07 Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. MC100LVELT22_07
Descripción  3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
Descarga  7 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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MC100LVELT22
http://onsemi.com
2
1
2
3
45
6
7
8
D0
GND
VCC
Q0
D1
Q1
Q1
Q0
LVPECL
LVTTL/
LVCMOS
Figure 1. 8−Lead Pinout (Top View) and Logic Diagram
PIN
FUNCTION
Table 1. PIN DESCRIPTION
Qn, Qn
LVPECL Differential Outputs
D0, D1
LVTTL/LVCMOS Inputs
VCC
Positive Supply
GND
Ground
EP
Exposed pad must be connected
to a sufficient thermal conduit.
Electrically connect to the most
negative supply or leave floating
open.
EP
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
N/A
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
Machine Model
> 4 kV
> 200 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
164
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
GND = 0 V
7
V
VI
Input Voltage
GND = 0 V
VI  VCC
7
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SO−8
SO−8
190
130
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
std bd
SO−8
41 to 44
± 5%
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
std bd
TSSOP−8
41 to 44
± 5%
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
Tsol
Wave Solder
Pb
Pb−Free
<2 to 3 sec @ 248
°C
<2 to 3 sec @ 260
°C
265
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.




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