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CAT28F020TRA-90T Datasheet(PDF) 11 Page - Catalyst Semiconductor

No. de pieza CAT28F020TRA-90T
Descripción Electrónicos  2 Megabit CMOS Flash Memory
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Fabricante Electrónico  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

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CAT28F020
11
Doc. No. 1029, Rev. C
28F020 F07
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
VCC
VPP
tWC
tWC
tRC
tAS
tAH
tCS
tCH
tCS
tCH
tCH
tEHQZ
tDF
tGHWL
tWPH
tWHWH1
tWHGL
tWP
tDS
HIGH-Z
DATA IN
= 40H
DATA IN
DATA IN
= C0H
VALID
DATA OUT
tDH
tWP
tDH
tDS
tDS
tWP
tDH
tOLZ
tOE
tOH
tLZ
tCE
tVPEL
VPPH
VPPL
0V
5.0V
VCC POWER-UP
& STANDBY
SETUP PROGRAM
COMMAND
LATCH ADDRESS
& DATA
PROGRAMMING
PROGRAM
VERIFY
COMMAND
PROGRAM
VERIFICATION
VCC POWER-DOWN/
STANDBY
Figure 6. A.C. Timing for Programming Operation
Program-Verify Mode
A Program-verify cycle is performed to ensure that all
bits have been correctly programmed following each
byte programming operation. The specific address is
already latched from the write cycle just completed, and
stays latched until the verify is completed. The Program-
verify operation is initiated by writing C0H into the
command register. An internal reference generates the
necessary high voltages so that the user does not need
to modify VCC. Refer to AC Characteristics (Program/
Erase) for specific timing parameters.
Erase-Verify Mode
The Erase-verify operation is performed on every byte
after each erase pulse to verify that the bits have been
erased.
Programming Mode
The programming operation is initiated using the pro-
gramming algorithm of Figure 7. During the first write
cycle, the command 40H is written into the command
register. During the second write cycle, the address of
the memory location to be programmed is latched on the
falling edge of WE, while the data is latched on the rising
edge of WE. The program operation terminates with the
next rising edge of WE. An integrated stop timer allows
for automatic timing control over this operation, eliminat-
ing the need for a maximum program timing specifica-
tion. Refer to AC Characteristics (Program/Erase) for
specific timing parameters.


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