CAT93C66

Doc. No. 1089 Rev. P

2

© 2007 Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

ABSOLUTE MAXIMUM RATINGS

(1)

Parameters

Ratings

Units

Storage Temperature

-65 to +150

°C

Voltage on Any Pin with Respect to Ground

(2)

-0.5 to +6.5

V

RELIABILITY CHARACTERISTICS

(3)

Symbol

Parameter

Min

Units

NEND

(4)

Endurance

1,000,000

Program/ Erase Cycles

TDR

Data Retention

100

Years

D.C. OPERATING CHARACTERISTICS (NEW PRODUCT, DIE REV. G)

Symbol

Parameter

Test Conditions

Min

Max

Units

Power Supply Current (Write)

1

mA

Power Supply Current (Read)

500

µA

Power Supply Current

(Standby) (x8 Mode)

ORG = GND

2

µA

Power Supply Current

(Standby) (x16 Mode)

1

µA

Input Leakage Current

1

µA

Output Leakage Current

1

µA

Input Low Voltage

-0.1

0.8

V

Input High Voltage

2

V

Input Low Voltage

0

V

Input High Voltage

V

Output Low Voltage

0.4

V

Output High Voltage

2.4

V

Output Low Voltage

0.2

V

Output High Voltage

V

Notes:

(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this

specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100

and JEDEC test methods.