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BYG90-90 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYG90-90 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES • Low switching losses • High breakdown voltage • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. Fig.1 Simplified outline (SOD106A) and symbol. handbook, 4 columns MAM129 - 1 Top view k a cathode identifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage 90 V VRRM repetitive peak reverse voltage 90 V VRWM crest working reverse voltage 90 V IF(AV) average forward current Tamb = 100 °C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 − 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; JEDEC method − 30 A IRSM non-repetitive peak reverse current tp = 100 µs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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