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BYG90-90 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BYG90-90
Descripción Electrónicos  Schottky barrier rectifier diode
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG90-90 Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 May 13
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
FEATURES
• Low switching losses
• High breakdown voltage
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power
supplies
• Rectifying
• Polarity protection.
DESCRIPTION
The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar
technology, and encapsulated in the rectangular SOD106A plastic SMD
package.
Fig.1 Simplified outline (SOD106A) and symbol.
handbook, 4 columns
MAM129 - 1
Top view
k
a
cathode identifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
90
V
VRRM
repetitive peak reverse voltage
90
V
VRWM
crest working reverse voltage
90
V
IF(AV)
average forward current
Tamb = 100 °C; see Fig.2;
Rth j-a = 13.5 K/W; note 1;
VR(equiv) = 0.2 V; note 2
1
A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method
30
A
IRSM
non-repetitive peak reverse current
tp = 100 µs
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C


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