TIP116G datasheet(4/8 Pages) ONSEMI

No. de pieza	TIP116G

Descripción Electrónicos	Plastic Medium-Power Complementary Silicon Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.8

0.2

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.6

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+8.0 V

V1

approx

−12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

ms

0

RB

51

D1

+4.0 V

VCC

−30 V

RC

TUT

≈ 8.0 k

≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

ZqJC(t) = r(t) RqJC

RqJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

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TIP116G Datasheet(PDF) 4 Page - ON Semiconductor

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