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TIP127G Datasheet(Hoja de datos) 1 Page - ON Semiconductor

No. de Pieza. TIP127G
Descripción  Plastic Medium-Power Complementary Silicon Transistors
Descarga  7 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
High DC Current Gain −
hFE
= 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
http://onsemi.com
1
2
3
4
TIP12x
= Device Code
x
= 0, 1, 2, 5, 6, or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
TIP12xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION




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