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BCX17 Datasheet(PDF) 1 Page - Fairchild Semiconductor

No. de Pieza. BCX17
Descripción  PNP General Purpose Amplifier
Descarga  3 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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BCX17 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Thermal Characteristics T
A=25°C unless otherwise noted
** Alumina = 0.4
×0.3×0.024 in. 9.5% alumina
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector current
- Continuous
500
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
45
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 10µA, IC = 0
50
V
ICBO
Collector Cutoff Current
VCE = 20V, IE = 0
VCE = 20V, IE = 0, TA = 150°C
100
5.0
nA
µA
IEBO
Emitter Cutoff Current
VEB = 5.0V, IC = 0
10
µA
On Characteristics
hFE
DC Current Gain
IC = 100mA, VCE = 1.0V
IC = 300mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V
100
70
40
600
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
0.62
V
VBE(on)
Base-Emitter On Voltage
IC = 500mA, VCE = 1.0V
1.2
V
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25
°C
300
2.4
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
417
°C/W
BCX17
PNP General Purpose Amplifier
• This device is esigned for general purpose amplifier and switching
application at current 0.5A.
• Sourced from process 78.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: T1


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