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FDZ493P Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDZ493P Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDZ493P Rev.B(W) www.fairchildsemi.com 2 Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V –20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250µA, referenced to 25°C –13 mV/°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA –0.6 –0.8 –1.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 3 mV/°C rDS(on) Drain to Source On Resistance VGS = –4.5V, ID = –4.6A 36 46 m Ω VGS = –2.5V, ID = –3.6A 58 72 VGS = –4.5V, ID = –4.6A,TJ=125°C 47 65 ID(on) On to State Drain Current VGS = –4.5V, VDS = –5V –10 A gFS Forward Transconductance VDS = –5V, ID = –4.6A 13 S (note 2) Dynamic Characteristics Ciss Input Capacitance VDS = –10V, VGS = 0V, f = 1MHz 754 pF Coss Output Capacitance 167 pF Crss Reverse Transfer Capacitance 92 pF Rg Gate Resistance f = 1MHz 6 Ω Switching Characteristics (note 2) td(on) Turn-On Delay Time VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 11 20 ns tr Rise Time 10 20 ns td(off) Turn-Off Delay Time 22 35 ns tf Fall Time 17 31 ns Qg(TOT) Total Gate Charge at 10V VDS = –10V ,ID = –4.6A VGS = –4.5V 7.5 11 nC Qgs Gate to Source Gate Charge 1.5 nC Qgd Gate to Drain “Miller” Charge 2.0 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current –1.4 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.4A (Note 2) –0.7 –1.2 V trr Reverse Recovery Time IF = –4.6A, di/dt = 100A/µs 17 ns Qrr Reverse Recovery Charge 5 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. a. 72°C/W when mounted on a 1 in2 pad of 2 oz copper,1.5” X 1.5” X 0.062” thick PCB b. 157°C/W when mounted on a minimum pad of 2 oz copper |
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