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CEM2082 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEM2082 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page Dual N-Channel Enhancement Mode Field Effect Transistor CEM2082 FEATURES 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 20 2.5 40 11 ±12 V W A A V 1 SO-8 1 Lead free product is acquired. http://www.cetsemi.com 5 D D D D S S S G 1 2 3 4 8 7 6 5 Rev 1. 2006.January Specification and data are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 50 R θJA |
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