CED3070 datasheet(1/4 Pages) CET

No. de pieza	CED3070

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

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Fabricante Electrónico	CET [Chino-Excel Technology]

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N-Channel Enhancement Mode Field Effect Transistor

CED3070/CEU3070

FEATURES

30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

30

0.48

60

240

62

±20

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

RDS(ON) = 13.5mΩ @VGS = 4.5V.

Lead free product is acquired.

http://www.cetsemi.com

Details are subject to change without notice .

Rev 2. 2006.Nov

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

50

2.1

RθJC

RθJA

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