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CA3141 Datasheet(PDF) 2 Page - Harris Corporation

No. de Pieza. CA3141
Descripción  High-Voltage Diode Array For Commercial, Industrial and Military Applications
Descarga  4 Pages
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Fabricante  HARRIS [Harris Corporation]
Página de inicio  http://www.harris.com
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CA3141 Datasheet(HTML) 2 Page - Harris Corporation

   
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Absolute Maximum Ratings
Thermal Information
Inverse Voltage (PIV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Peak Diode -to-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . 30V
Peak Forward Surge Current [IF (Surge)]. . . . . . . . . . . . . . . . 100mA
DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 1)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . . . . 50mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC Forward Voltage Drop
VF
IF (Anode)
100
µA
-
0.7
0.9
V
1mA
-
0.78
1
V
10mA
-
0.93
1.2
V
DC Reverse Breakdown Voltage
V(BR)R
IF = -10µA30
50
-
V
DC Breakdown Voltage Between Any Diode and
Substrate
V(BR)DI
IDI = 10µA30
50
-
V
DC Reverse (Leakage) Current
IR
VF = -20V
-
-
100
nA
DC Reverse (Leakage) Current Between Any Diode
and Substrate
IDI
VDI = 20V
-
-
100
nA
Magnitude of Diode Offset Voltage Between Diode Pairs
VDI = 20V, IFA = 1mA
-
0.55
-
mV
Temperature Coefficient of Forward Voltage Drop
∆VF/∆TIF = 1mA
-
-1.5
-
mV/oC
Reverse Recovery Time
tRR
IF = 2mA, IR = 2mA
-
50
-
ns
Diode Capacitance
CD
See Figure 4
pF
Diode Anode-to-Substrate Capacitance
CDAI
See Figure 5
pF
Diode Cathode-to-Substrate Capacitance
CDCI
See Figure 6
pF
Magnitude of Cathode-to-Anode Current Ratio
|IFC/IFA|IFA = 1mA, VDS = 10V
0.9
0.96
-
-
Typical Performance Curves
FIGURE 1. DC FORWARD VOLTAGE DROP vs FORWARD
CURRENT
FIGURE 2. DC FORWARD VOLTAGE DROP vs
TEMPERATURE
FORWARD CURRENT (
µA)
TA = 25
oC
1
0.8
0.6
0.4
0.2
0
0.1
1
10
102
103
104
1.2
0.8
0.6
0.4
0.2
0
-100
1
-50
0
50
100
150
TEMPERATURE (oC)
IF = 10mA
IF = 3mA
IF = 1mA
IF = 300µA
IF = 100µA
IF = 10µA
IF = 1µA
IF = 100nA
CA3141


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