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S29AL016M Datasheet(PDF) 4 Page - SPANSION

No. de Pieza. S29AL016M
Descripción  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) 3.0 Volt-only Boot Sector Flash Memory Featuring MirrorBit™ Technology
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Fabricante  SPANSION [SPANSION]
Página de inicio  http://www.spansion.com
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S29AL016M Datasheet(HTML) 4 Page - SPANSION

 
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2S29AL016M
S29AL016M_00_A7 October 11, 2006
Data
Sheet
General Description
The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152
bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-
ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears
on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device re-
quires only a single 3.0 volt power supply for both read and write functions,
designed to be programmed in-system with the standard system 3.0 volt VCC sup-
ply. The device can also be programmed in standard EPROM programmers.
The device offers access times of 90 and 100 ns. To eliminate bus contention the
device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
The device is entirely command set compatible with the JEDEC single-power-
supply Flash standard. Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll
the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/
Busy# (RY/BY#) output to determine whether the operation is complete. To
facilitate programming, an Unlock Bypass mode reduces command sequence
overhead by requiring only two write cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automati-
cally inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the de-
vice, enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the standby mode when it detects
specific voltage levels on CE# and RESET#, or when addresses have been stable
for a specified period of time.
The Secured Silicon Sector provides a 128-word/256-byte area for code or
data that can be permanently protected. Once this sector is protected, no further
changes within the sector can occur.
MirrorBit flash technology combines years of Flash memory manufacturing expe-
rience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via hot-hole
assisted erase. The data is programmed using hot electron injection.


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