DS11303 Rev. 19- 2

1 of 4

2N7002

www.diodes.com

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

•

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free/RoHS Compliant (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Maximum Ratings

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

≤ 1.0MΩ

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Total Power Dissipation (Note 1)

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

417

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Note:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Terminal Connections: See Diagram

•

Marking: K72, K7A, K7B (See Page 2)

•

Ordering & Date Code Information: See Page 2

•

Weight: 0.008 grams (approximate)

Mechanical Data

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

D

G

S

Source

Gate

Drain

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

SPICE MODEL: 2N7002