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BAW56_ Datasheet(PDF) 1 Page - Diodes Incorporated

No. de Pieza. BAW56_
Descripción  DUAL SURFACE MOUNT SWITCHING DIODE
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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BAW56_ Datasheet(HTML) 1 Page - Diodes Incorporated

   
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BAW56
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
Maximum Ratings @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Note 1)
IFM
300
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0s
IFSM
2.0
1.0
A
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RθJA
357
°C/W
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150
°C
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
75
V
IR = 2.5μA
Forward Voltage
VF
0.715
0.855
1.0
1.25
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Reverse Current (Note 2)
IR
2.5
50
30
25
μA
μA
μA
nA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Total Capacitance
CT
2.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1.
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2.
Short duration test pulse used to minimize self-heating effect.
3.
No purposefully added lead.
DS12008 Rev. 16 - 2
1 of 3
www.diodes.com
BAW56
© Diodes Incorporated
SPICE MODEL: BAW56


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