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MMBD4448HCQW Datasheet(PDF) 2 Page - Diodes Incorporated

No. de Pieza. MMBD4448HCQW
Descripción  SURFACE MOUNT FAST SWITCHING DIODE ARRAY
Descarga  4 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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MMBD4448HCQW Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DS30153 Rev. 14 - 2
2 of 4
MMBD4448HCQW /AQW /ADW /CDW /SDW /TW
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 3)
V(BR)R
80
¾
V
IR = 100mA
Forward Voltage
VF
0.62
¾
¾
¾
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 3)
IR
¾
100
50
30
25
nA
m
A
m
A
nA
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Total Capacitance
CT
¾
3.5
pF
VR = 6V, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
VR = 6V, IF = 5mA
Notes:
3. Short duration test pulse used to minimize self-heating effect.
10
100
1000
1
0.1
0
1.6
1.2
0.4
0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
T = 125ºC
A
T = -40ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A
0.1
1
10
100
1000
10000
0
20
40
60
80
100
V , REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
T = -40ºC
A
T = 25ºC
A
T = 75ºC
A
T = 125ºC
A
T = 0ºC
A
0
0.5
1
2.5
2
1.5
3
0
10
20
40
30
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Capacitance vs. Reverse Voltage
f = 1MHz
0
50
100
150
200
250
0
120
160
80
40
200
T , AMBIENT TEMPERATURE (
°C)
A
Fig. 4 Power Derating Curve, Total Package


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