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AM29F200B Datasheet(PDF) 2 Page - Advanced Micro Devices

No. de Pieza. AM29F200B
Descripción  2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Descarga  11 Pages
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Fabricante  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
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AM29F200B Datasheet(HTML) 2 Page - Advanced Micro Devices

 
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SUPPLEMENT
Publication# 21257
Rev: D Amendment/+4
Issue Date: June 27, 2001
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
■ Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F200A device
■ High performance
— 70, 90, or 120 ns access time
■ Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 µA typical standby current
■ Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write/erase cycles
guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■ Erase Suspend/Resume
— Supports reading data from a sector not being
erased
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
■ 20-year data retention at 125°C
■ Tested to datasheet specifications at
temperature
— Contact AMD for higher temperature range
devices
■ Quality and reliability levels equivalent to
standard packaged components
■ Shipped in waffle pack, surftape, and unsawn
wafer
■ 500 µm die/wafer thickness


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