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AM29LV040B Datasheet(PDF) 27 Page - Advanced Micro Devices

No. de pieza AM29LV040B
Descripción Electrónicos  4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV040B Datasheet(HTML) 27 Page - Advanced Micro Devices

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October 11, 2006 21354E4
Am29LV040B
27
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-60R
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
60
70
90
120
ns
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
35
50
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs


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