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AM29LV160B Datasheet(PDF) 4 Page - Advanced Micro Devices

No. de Pieza. AM29LV160B
Descripción  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Descarga  54 Pages
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Fabricante  AMD [Advanced Micro Devices]
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AM29LV160B Datasheet(HTML) 4 Page - Advanced Micro Devices

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The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory
organized as 2,097,152 bytes or 1,048,576 words. The de-
vice is offered in 48-ball FBGA, 44-pin SO, and 48-pin
TSOP packages. The word-wide data (x16) appears on
DQ15–DQ0; the byte-wide (x8) data appears on DQ7–
DQ0. This device is designed to be programmed in-system
with the standard system 3.0 volt VCC supply. A 12.0 V VPP
or 5.0 VCC are not required for write or erase operations.
The device can also be programmed in standard
EPROM programmers.
The device offers access times of 70, 80, 90, and 120
ns, allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the de-
vice has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The Am29LV160B is entirely command set compatible
with the JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protec-
tion featur e dis ables b oth program a nd e rase
operations in any combination of the sectors of memory.
This can be achieved in-system or via programming
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to
the system reset circuitry. A system reset would thus
also reset the device, enabling the system micropro-
cessor to read the boot-up firmware from the Flash
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly re-
duced in both these modes.
AMD’s Flash technology combines years of Flash mem-
ory manufacturing experience to produce the highest
levels of quality, reliability and cost effectiveness. The
device electrically erases all bits within a sector si-
multaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.

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