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AM29LV065DU121REF Datasheet(PDF) 3 Page - Advanced Micro Devices

No. de pieza AM29LV065DU121REF
Descripción Electrónicos  64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV065DU121REF Datasheet(HTML) 3 Page - Advanced Micro Devices

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Publication# 23544
Rev: C Amendment: 2
Issue Date: February 16, 2006
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV065D
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO
TM Control
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
■ VersatileIOTM control
— Device generates output voltages and tolerates input
voltages on the DQ I/Os as determined by the voltage
on V
IO input
■ High performance
— Access times as fast as 90 ns
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
■ SecSi (Secured Silicon) Sector region
— 256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number
— May be programmed and locked at the factory or by
the customer
— Accessible through a command sequence
■ Ultra low power consumption (typical values at 3.0 V,
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
■ Flexible sector architecture
— One hundred twenty-eight 64 Kbyte sectors
■ Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
■ Minimum 1 million erase cycle guarantee per sector
■ Package options
— 48-pin TSOP
— 63-ball FBGA
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
■ Hardware reset pin (RESET#)
— Hardware method to reset the device for reading array
data
■ ACC pin
— Accelerates programming time for higher throughput
during system production
■ Program and Erase Performance (V
HH not applied to
the ACC input pin)
— Byte program time: 5 µs typical
— Sector erase time: 0.9 s typical for each 64 Kbyte
sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system


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