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HI5813 Datasheet(PDF) 3 Page - Intersil Corporation

No. de Pieza. HI5813
Descripción  CMOS 3.3V, 25 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
Descarga  12 Pages
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Fabricante  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
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HI5813 Datasheet(HTML) 3 Page - Intersil Corporation

 
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3
Absolute Maximum Ratings
Thermal Information
Supply Voltage
VDD to VSS . . . . . . . ... .. .. .. .. ..(VSS -0.5V) < VDD < +6.5V
VAA+toVAA- . . . . . . ... .. .. .. .. .. (VSS -0.5V) to (VSS +6.5V)
VAA+toVDD. . . . . . . ... .. .. .. .. .. .. .. .. .. ... .. .. .. ±0.3V
Analog and Reference Inputs
VIN,VREF+, VREF-. . ... .. .. (VSS -0.3V) < VINA <(VDD +0.3V)
Digital I/O Pins .. .. .. .. . . . . . . . (VSS -0.3V) < VI/O <(VDD +0.3V)
Operating Conditions
Temperature Range . . . ... .. .. .. .. .. .. .. .. .. .. -40oCto 85oC
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . ... .. .. .. .. .. .. .. .. .. ..
75
Maximum Junction Temperature
SOIC Package . . . . . . ... .. .. .. .. .. .. .. .. .. ... .. .. .150oC
Maximum Storage Temperature Range .. .. .. .. .. -65οCto 150oC
Maximum Lead Temperature (Soldering, 10s). .. .. ... .. .. . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationof the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
VDD =VAA+=VREF+= 3.3V,VSS =VAA-= VREF- = GND, CLK = 500kHz,
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
25oC
-40oCTO 85oC
UNITS
MIN
TYP
MAX
MIN
MAX
ACCURACY
Resolution
12
-
-
12
-
Bits
Integral Linearity Error, INL (End Point)
-
-
±2.5
-
±2.5
LSB
Differential Linearity Error, DNL
-
-
±2.0
-
±2.0
LSB
Gain Error, FSE (Adjustable to Zero)
-
-
±2.0
-
±2.0
LSB
Offset Error, VOS (Adjustable to Zero)
-
-
±2.5
-
±2.5
LSB
DYNAMIC CHARACTERISTICS
Signal to Noise Ratio, SINAD
RMS Signal
RMS Noise + Distortion
fS =500kHz, fIN =1kHz
-
63.9
-
-
-
dB
Signal to Noise Ratio, SNR
RMS Signal
RMS Noise
fS =500kHz, fIN =1kHz
-
65.1
-
-
-
dB
Total Harmonic Distortion, THD
fS =750kHz, fIN = 1kHz
-
-70.8
-
-
-
dBc
Spurious Free Dynamic Range, SFDR
fS =500kHz, fIN =1kHz
-
71.8
-
-
-
dB
ANALOG INPUT
Input Current, Dynamic
At VIN =VREF+, 0V
-
±50
±100
-
±100
µA
Input Current, Static
Conversion Stopped
-
±0.4
±10
-
±10
µA
Input Bandwidth -3dB
-
1
-
-
-
MHz
Reference Input Current
-
160
-
-
-
µA
Input Series Resistance, RS
In Series with Input
CSAMPLE
-420
-
-
-
W
Input Capacitance, CSAMPLE
During Sample State
-
380
-
-
-
pF
Input Capacitance, CHOLD
During Hold State
-
20
-
-
-
pF
DIGITAL INPUTS OEL,OEM,STRT
High-Level Input Voltage, VIH
2.4
-
-
2.4
-
V
Low-Level Input Voltage, VIL
--
0.8
-
0.8
V
HI5813


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