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2N6426 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N6426 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Discrete POWER & Signal Technologies NPN Darlington Transistor 2N6426 This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units 2N6426 PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 © 1997 Fairchild Semiconductor Corporation |
Número de pieza similar - 2N6426_01 |
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Descripción similar - 2N6426_01 |
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