Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

AM29DS323B120WMIN Datasheet(PDF) 29 Page - SPANSION

No. de pieza AM29DS323B120WMIN
Descripción Electrónicos  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
Download  52 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SPANSION [SPANSION]
Página de inicio  http://www.spansion.com
Logo SPANSION - SPANSION

AM29DS323B120WMIN Datasheet(HTML) 29 Page - SPANSION

Back Button AM29DS323B120WMIN Datasheet HTML 25Page - SPANSION AM29DS323B120WMIN Datasheet HTML 26Page - SPANSION AM29DS323B120WMIN Datasheet HTML 27Page - SPANSION AM29DS323B120WMIN Datasheet HTML 28Page - SPANSION AM29DS323B120WMIN Datasheet HTML 29Page - SPANSION AM29DS323B120WMIN Datasheet HTML 30Page - SPANSION AM29DS323B120WMIN Datasheet HTML 31Page - SPANSION AM29DS323B120WMIN Datasheet HTML 32Page - SPANSION AM29DS323B120WMIN Datasheet HTML 33Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 29 / 52 page
background image
28
Am29DS32xG
May 15, 2002
ADV ANC E
INFO RMAT ION
WRITE OPERATION STATUS
The device provides several bits to determine the status of
a program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 15 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method
for determining whether a program or erase operation is
complete or in progress. The device also provides a hard-
ware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
During the Embedded Program algorithm, the device out-
puts on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is ac-
tive for approximately 1 µs, then that bank returns to the
read mode.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status infor-
mation on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 µs, then
the bank returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected. However, if the sys-
tem reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ7–DQ0 will appear on suc-
cessive read cycles.
Table 15 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure 21
in the AC Characteristics section shows the Data#
Polling timing diagram.
Figure 5.
Data# Polling Algorithm
DQ7 = Data?
Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.


Número de pieza similar - AM29DS323B120WMIN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323D AMD-AM29DS323D Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB110 AMD-AM29DS323DB110 Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB110EI AMD-AM29DS323DB110EI Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB110EI AMD-AM29DS323DB110EI Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
More results

Descripción similar - AM29DS323B120WMIN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DS320G SPANSION-AM29DS320G Datasheet
711Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D_06 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DL322C AMD-AM29DL322C Datasheet
691Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D Datasheet
1Mb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DL32XG SPANSION-AM29DL32XG_06 Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DL320G AMD-AM29DL320G Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL32XG AMD-AM29DL32XG Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D_05 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD_06 Datasheet
1Mb / 57P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com