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FCA20N60_F109 Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FCA20N60_F109
Descripción Electrónicos  600V N-Channel MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCA20N60_F109 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FCH20N60 / FCA20N60 Rev. A2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH20N60
FCH20N60
TO-247
-
-
30
FCA20N60
FCA20N60
TO-3P
-
-
30
FCA20N60
FCA20N60_F109
TO-3PN
-
-
30
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ΔBV
DSS
/
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C--
0.6
--
V/
°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 20A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 10A
--
0.15
0.19
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 10A
(Note 4)
--
17
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
2370
3080
pF
Coss
Output Capacitance
--
1280
1665
pF
Crss
Reverse Transfer Capacitance
--
95
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
65
85
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
165
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300V, ID = 20A
RG = 25Ω
(Note 4, 5)
--
62
135
ns
tr
Turn-On Rise Time
--
140
290
ns
td(off)
Turn-Off Delay Time
--
230
470
ns
tf
Turn-Off Fall Time
--
65
140
ns
Qg
Total Gate Charge
VDS = 480V, ID = 20A
VGS = 10V
(Note 4, 5)
--
75
98
nC
Qgs
Gate-Source Charge
--
13.5
18
nC
Qgd
Gate-Drain Charge
--
36
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 20A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0V, IS = 20A
dIF/dt =100A/μs
(Note 4)
--
530
--
ns
Qrr
Reverse Recovery Charge
--
10.5
--
μC


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