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FCA20N60_F109 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FCA20N60_F109 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FCH20N60 / FCA20N60 Rev. A2 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCH20N60 FCH20N60 TO-247 - - 30 FCA20N60 FCA20N60 TO-3P - - 30 FCA20N60 FCA20N60_F109 TO-3PN - - 30 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ΔBV DSS / ΔT J Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C-- 0.6 -- V/ °C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C -- -- -- -- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF Coss Output Capacitance -- 1280 1665 pF Crss Reverse Transfer Capacitance -- 95 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, ID = 20A RG = 25Ω (Note 4, 5) -- 62 135 ns tr Turn-On Rise Time -- 140 290 ns td(off) Turn-Off Delay Time -- 230 470 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC Qgs Gate-Source Charge -- 13.5 18 nC Qgd Gate-Drain Charge -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 20A dIF/dt =100A/μs (Note 4) -- 530 -- ns Qrr Reverse Recovery Charge -- 10.5 -- μC |
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