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IRF2807L Datasheet(Hoja de datos) 1 Page - International Rectifier

No. de Pieza. IRF2807L
Descripción  HEXFET Power MOSFET
Descarga  10 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
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 1 page
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IRF2807SPbF
IRF2807LPbF
HEXFET® Power MOSFET
1/4/05
VDSS = 75V
RDS(on) = 13mΩ
ID = 82A
‡
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
82
‡
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
58
A
IDM
Pulsed Drain Current

280
PD @TC = 25°C
Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

43
A
EAR
Repetitive Avalanche Energy

23
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.9
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
D2Pak
IRF2807SPbF
TO-262
IRF2807LPbF
www.irf.com
1
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient (PCB mount)**
–––
40
Thermal Resistance
°C/W
PD - 95945




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