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IRFB4610PBF Datasheet(PDF) 3 Page - International Rectifier

No. de pieza IRFB4610PBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  11 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB4610PBF Datasheet(HTML) 3 Page - International Rectifier

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IRF/B/S/SL4610PbF
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
120
140
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 80V
VDS= 50V
VDS= 20V
ID= 44A
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
ID = 73A
VGS = 10V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V


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