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IRFS4410PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFS4410PBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  11 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFS4410PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFB/S/SL4410PbF
2
www.irf.com
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
„ ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š RθJC (end of life) for D2Pak and TO-262 = 0.75°C/W. Note: This is the maximum
measured value after 1000 temperature cycles from -55 to 150°C and is
accounted for by the physical wearout of the die attach medium.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.094 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
8.0
10
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
RG
Gate Input Resistance
–––
1.5
–––
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
120
–––
–––
S
Qg
Total Gate Charge
–––
120
180
nC
Qgs
Gate-to-Source Charge
–––
31
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
44
–––
td(on)
Turn-On Delay Time
–––
24
–––
ns
tr
Rise Time
–––
80
–––
td(off)
Turn-Off Delay Time
–––
55
–––
tf
Fall Time
–––
50
–––
Ciss
Input Capacitance
–––
5150
–––
pF
Coss
Output Capacitance
–––
360
–––
Crss
Reverse Transfer Capacitance
–––
190
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
420
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 500 –––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
88™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
380
A
(Body Diode)Ãd
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
38
56
ns
TJ = 25°C
VR = 85V,
–––
51
77
TJ = 125°C
IF = 58A
Qrr
Reverse Recovery Charge
–––
61
92
nC TJ = 25°C
di/dt = 100A/µs g
–––
110
170
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.8
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 58A
RG = 4.1Ω
VGS = 10V g
VDD = 65V
TJ = 25°C, IS = 58A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAd
VGS = 10V, ID = 58A g
VDS = VGS, ID = 150µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 80V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V i, See Fig.11
VGS = 0V, VDS = 0V to 80V h, See Fig. 5
Conditions
VDS = 50V, ID = 58A
ID = 58A
VGS = 20V
VGS = -20V


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