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FDD3670 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD3670 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD3670 Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 50 V, ID = 7.3 A 360 mJ IAR Maximum Drain-Source Avalanche Current 7.3 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 92 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.5 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –7.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.3 A VGS = 10 V, ID = 7.3 A, TJ = 125 °C VGS = 6 V, ID = 7.0 A 22 39 24 32 56 35 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 7.3 A 15 31 S Dynamic Characteristics Ciss Input Capacitance 2490 pF Coss Output Capacitance 265 pF Crss Reverse Transfer Capacitance VDS = 50 V, V GS = 0 V, f = 1.0 MHz 80 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 16 26 ns tr Turn–On Rise Time 10 18 ns td(off) Turn–Off Delay Time 56 84 ns tf Turn–Off Fall Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 25 40 ns Qg Total Gate Charge 57 80 nC Qgs Gate–Source Charge 11 nC Qgd Gate–Drain Charge VDS = 50 V, ID = 7.3 A, VGS = 10 V 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 V Notes: 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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Descripción similar - FDD3670 |
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