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FDN336P_05 Datasheet(Hoja de datos) 1 Page - Fairchild Semiconductor

No. de Pieza. FDN336P_05
Descripción  Single P-Channel 2.5V Specified PowerTrench MOSFET
Descarga  5 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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January 2005
©2005 Fairchild Semiconductor Corporation
FDN306P Rev D
FDN336P
Single P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
Features
–1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
RDS(ON) = 0.27 Ω @ VGS = –2.5 V
Low gate charge (3.6 nC typical)
High performance trench technology for extremely
low RDS(ON)
SuperSOT
TM -3 provides low R
DS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
– Continuous
(Note 1a)
1.3
A
– Pulsed
–10
Maximum Power Dissipation
(Note 1a)
0.5
PD
(Note 1b)
0.46
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
336
FDN336P
7’’
8mm
3000 units




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