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FDN340P Datasheet(Hoja de datos) 1 Page - Fairchild Semiconductor

No. de Pieza. FDN340P
Descripción  Single P-Channel, Logic Level, PowerTrench®MOSFET
Descarga  5 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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 1 page
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September 200
©2007 FairchildSemiconductor Corporation
FDN340P Rev E1
FDN340P
Si
ngl
eP-Channel
, LogicLevel
, PowerTrench®
®
®
® MOSFET
GeneralDescription
Thi
s P-Channel Logi
c Level MOSFET i
s produced
usi
ngFai
rchi
ldSemi
conductor advancedPower Trench
process that has been especi
ally tai
lored to mi
ni
mi
ze
the on-state resi
stance and yet mai
ntai
n low gate
charge for superi
or swi
tchi
ngperf
ormance.
These devi
cesare well sui
ted for portable electroni
cs
appli
cati
ons:load swi
tchi
ng and power management,
batterychargi
ngci
rcui
ts,andDC/
DC conversi
on.
Features
• –2A,20 V
RDS(ON)=70 m
Ω @ VGS =–4.5 V
RDS(ON)=110 m
Ω @ VGS =–2.5 V
• Low gate charge (7.2 nC typical).
• Highperformance trenchtechnology for extremely
low RDS(ON).
• Highpower versionofindustryStandardSOT-23
package. Identi
cal pi
n-out to SOT-23wi
th30%
hi
gher power handli
ngcapabi
li
ty.
D
S
G
Absol
uteMaxi
m um Rati
ngs T
A=25
oC unlessotherwise noted
Sym bol
Param eter
Ratings
Uni
ts
VDSS
Drai
n-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drai
nCurrent
– Conti
nuous
(Note 1a)
–2
A
– Pulsed
–10
Power Di
ssi
pati
onf
or Si
ngle Operati
on
(Note 1a)
0.5
PD
(Note 1b)
0.46
W
TJ,TSTG
Operati
ngandStorage Juncti
onTemperature Range
–55 to +150
°C
Therm alCharacteri
sti
cs
RθJA
Thermal Resi
stance,Juncti
on-to-Ambi
ent
(Note 1a)
250
°C/W
RθJC
Thermal Resi
stance,Juncti
on-to-Case
(Note 1)
75
°C/W
PackageMarki
ng and Orderi
ng I
nform ati
on
Device M arking
Devi
ce
ReelSize
Tape width
Quantity
340
FDN340P
7’
8mm
3000 uni
ts
February 2007




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