Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

FDS6612A Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDS6612A
Descripción Electrónicos  Single N-Channel, Logic-Level, PowerTrench MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6612A Datasheet(HTML) 2 Page - Fairchild Semiconductor

  FDS6612A_03 Datasheet HTML 1Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 2Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 3Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 4Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 5Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 6Page - Fairchild Semiconductor FDS6612A_03 Datasheet HTML 7Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
FDS6612A Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
26
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
VDS = 24 V, VGS = 0 V, TJ=55
°C
10
µA
IGSS
Gate–Body Leakage
VGS =
±20 V, V
DS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
1
1.9
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–4.4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 8.4 A
VGS = 4.5 V,
ID = 7.2 A
VGS= 10 V, ID = 8.4 A, TJ=125
°C
19
24
25
22
30
37
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 15 V,
ID = 8.4 A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
560
pF
Coss
Output Capacitance
140
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
55
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
2.5
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
7
14
ns
tr
Turn–On Rise Time
5
10
ns
td(off)
Turn–Off Delay Time
22
35
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
3
6
ns
Qg
Total Gate Charge
5.4
7.6
nC
Qgs
Gate–Source Charge
1.7
nC
Qgd
Gate–Drain Charge
VDS = 15 V,
ID = 8.4 A,
VGS = 5 V
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
0.77
1.2
V
trr
Diode Reverse Recovery Time
19
nS
Qrr
Diode Reverse Recovery Charge
IF = 8.4 A, diF/dt = 100 A/µs
9
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
50°C/W when mounted
on a 1in
2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


Número de pieza similar - FDS6612A_03

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
VBsemi Electronics Co.,...
FDS6612A-NL VBSEMI-FDS6612A-NL Datasheet
1,008Kb / 9P
   N-Channel 20V (D-S) MOSFET
More results

Descripción similar - FDS6612A_03

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Fairchild Semiconductor
FDS6680A FAIRCHILD-FDS6680A Datasheet
102Kb / 5P
   Single N-Channel, Logic Level, PowerTrench MOSFET
SI4822DY FAIRCHILD-SI4822DY Datasheet
94Kb / 5P
   Single N-Channel, Logic Level, PowerTrench MOSFET
FDC655BN FAIRCHILD-FDC655BN Datasheet
528Kb / 6P
   Single N-Channel, Logic Level, PowerTrench MOSFET
FDR4420A FAIRCHILD-FDR4420A_07 Datasheet
67Kb / 5P
   Single N-Channel, Logic Level, PowerTrench MOSFET
SI4410DY FAIRCHILD-SI4410DY Datasheet
239Kb / 3P
   Single N-Channel Logic Level PowerTrench MOSFET
FDS6670A FAIRCHILD-FDS6670A_03 Datasheet
138Kb / 5P
   Single N-Channel, Logic Level, PowerTrench MOSFET
FDM6296 FAIRCHILD-FDM6296 Datasheet
471Kb / 6P
   Single N-Channel, Logic-Level, PowerTrench MOSFET
FDS4410A FAIRCHILD-FDS4410A Datasheet
112Kb / 5P
   Single N-Channel, Logic-Level, PowerTrench MOSFET
SI4412DY FAIRCHILD-SI4412DY Datasheet
267Kb / 3P
   Single N-Channel Logic Level PowerTrench MOSFET
FDT461N FAIRCHILD-FDT461N Datasheet
267Kb / 10P
   N-Channel Logic Level PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com