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PTH04T220W Datasheet(PDF) 6 Page - Texas Instruments

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No. de Pieza. PTH04T220W
Descripción  16-A, 2.2-V to 5.5-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER MODULE WITH TURBOTRANS
Descarga  39 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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PTH04T220W Datasheet(HTML) 6 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS
PTH04T220W, PTH04T221W
SLTS275A – DECEMBER 2006 – REVISED FEBRUARY 2007
PTH04T221W (Ceramic Capacitors)
T
A = 25°C, VI = 5 V, VO = 3.3 V, CI = 300 µF ceramic, CO = 300 µF ceramic, and IO = IO max (unless otherwise stated)
PARAMETER
TEST CONDITIONS
PTH04T221W
UNIT
MIN
TYP
MAX
IO
Output current
Over VO range
25
°C, natural convection
0
16
A
0.69
≤ V
O≤ 1.7
2.2
5.5
VI
Input voltage range
Over IO range
V
1.7 < VO≤ 3.6 VO+0.5(1)
5.5
VOADJ
Output voltage adjust range
Over IO range
0.69
3.6
V
Set-point voltage tolerance
±0.5
±1 (2)
%Vo
Temperature variation
–40
°C < T
A < 85°C
±0.3
%Vo
VO
Line regulaltion
Over VI range
±3
mV
Load regulation
Over IO range
±2
mV
Total output variation
Includes set-point, line, load, –40
°C ≤ T
A ≤ 85°C
±1.5 (2)
%Vo
RSET = 1.21 kΩ, VO = 3.3 V
94
RSET = 2.38 kΩ, VO = 2.5 V
91
RSET = 4.78 kΩ, VO = 1.8 V
88
η
Efficiency
IO = 16 A
RSET = 7.09 kΩ, VO = 1.5 V
87
RSET = 12.1 kΩ, VO = 1.2 V
84
RSET = 20.8 kΩ, VO = 1.0 V
82
RSET = 689 kΩ, VO = 0.7 V
76
VO Ripple (peak-to-peak)
20-MHz bandwidth
20
mVPP
ILIM
Overcurrent threshold
Reset, followed by auto-recovery
32
A
ttr
Recovery time
60
µs
w/o TurboTrans
CO= 300 µF, Type A
∆V
tr
2.5 A/µs load step
VO over/undershoot
145
mV
Transient response
50 to 100% IOmax
ttrTT
w/ TurboTrans
Recovery time
220
µs
VO = 2.5 V
CO= 2000 µF, Type A
mV
∆V
trTT
VO over/undershoot
50
RTT = short
IIL
Track input current (pin 9)
Pin to GND
–130(3)
µA
dVtrack/dt
Track slew rate capability
CO ≤ CO (max)
1
V/ms
VI increasing, RUVLO = OPEN
1.95
2.19
Adjustable Under-voltage lockout
UVLOADJ
Vi decreasing, RUVLO = OPEN
1.30
1.50
V
(pin 10)
Hysteresis, RUVLO = OPEN
0.5
Input high voltage (VIH)
Open(4)
V
Inhibit control (pin 10)
Input low voltage (VIL)
-0.2
0.8
Input low current (IIL ), Pin 10 to GND
-235
µA
II
Input standby current
Inhibit (pin 10) to GND, Track (pin 9) open
5
mA
f s
Switching frequency
Over VI and IO ranges, SmartSync (pin 11) to GND
300
kHz
Synchronization (SYNC)
fSYNC
240
400
kHz
frequency
VSYNCH
SYNC High-Level Input Voltage
2
5.5
V
VSYNCL
SYNC Low-Level Input Voltage
0.8
V
tSYNC
SYNC Minimum Pulse Width
200
ns
CI
External input capacitance
Ceramic
300 (5)
µF
(1)
The minimum input voltage is 2.2 V or (VO + 0.5) V, whichever is greater.
(2)
The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a
tolerance of 1% with 100 ppm/°C or better temperature stability. .
(3)
A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 9. The
open-circuit voltage is less than VI.
(4)
This control pin has an internal pull-up. Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when
input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. The open-circuit voltage is less than
3.5 Vdc. For additional information, see the related application note.
(5)
300 µF of ceramic input capacitance is required for proper operation.
6
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