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J112 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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J112 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 13 page 5 G D S J111 J112 J113 MMBFJ111 MMBFJ112 MMBFJ113 N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C SOT-23 Mark: 6P / 6R / 6S G S D TO-92 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation NOTE: Source & Drain are interchangeable Symbol Characteristic Max Units J111-113 *MMBFJ111-113 PD Total Device Dissipation Derate above 25 °C 625 5.0 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W J111/112/113/MMBFJ111/112/113, Rev A |
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