BUL45_06 datasheet(4/8 Pages) ONSEMI

No. de pieza	BUL45

Descripción Electrónicos	NPN Silicon Power Transistor

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BUL45

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4

IC, COLLECTOR CURRENT (AMPS)

0

IC, COLLECTOR CURRENT (AMPS)

1000

0

46

2000

0

3500

3

hFE, FORCED GAIN

6

50

0

IC, COLLECTOR CURRENT (AMPS)

150

0

2000

0

12

15

200

100

2

25

200

150

100

400

500

1000

1500

2500

3000

03

4

1000

1500

2500

9

13

5

0

500

3000

4

5

7

8

10

11

13

14

250

50

300

1200

1

200

600

800

8

70

4

6

2

13

5

8

7

3500

2000

1000

1500

2500

500

3000

25

03

4

1

25

03

4

1

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

Figure 7. Resistive Switching, ton

Figure 8. Resistive Switching, toff

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time, tsi(hFE)

Figure 11. Inductive Switching, tc & tfi, IC/IB = 5

Figure 12. Inductive Switching, tc & tfi, IC/IB = 10

IC/IB = 10

IC/IB = 5

IC/IB = 10

IB(off) = IC/2

VCC = 300 V

PW = 20 ms

TJ = 25°C

TJ = 125°C

IB(off) = IC/2

VCC = 300 V

PW = 20 ms

TJ = 25°C

TJ = 125°C

IC = 1 A

VZ = 300 V

VCC = 15 V

IB(off) = IC/2

LC = 200 mH

IC/IB = 5

IC/IB = 10

TJ = 25°C

TJ = 125°C

IC = 2 A

TJ = 25°C

TJ = 125°C

IB(off) = IC/2

LC = 200 mH

VZ = 300 V

VCC = 15 V

IB(off) = IC/2

LC = 200 mH

VZ = 300 V

TJ = 25°C

TJ = 125°C

tc

tfi

tc

tfi

TJ = 25°C

TJ = 125°C

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

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