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AO4720 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4720 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 4 page AO4720 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 0.1 TJ=125°C 20 IGSS 0.1 µA VGS(th) Gate Threshold Voltage 1.3 1.62 2 V ID(ON) 120 A 9.3 11.0 TJ=125°C 13.8 17.3 14 17.5 m Ω gFS 37 S VSD 0.40 0.5 V IS 5A Ciss 1267 1600 pF Coss 308 pF Crss 118 pF Rg 1.3 2.0 Ω Qg(10V) 21 30 nC Qg(4.5V) 10.4 14 nC Qgs 3.0 nC Qgd 3.6 nC tD(on) 5.2 ns tr 3.8 ns tD(off) 21.2 ns tf 4.4 ns trr 11.2 17 ns Qrr 10.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Total Gate Charge VGS=10V, VDS=15V, ID=13A Gate Drain Charge VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime m Ω VGS=4.5V, ID=11A IS=1A,VGS=0V VDS=5V, ID=13A Maximum Body-Diode + Schottky Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VDS=VGS ID=250µA Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS Zero Gate Voltage Drain Current mA VDS=0V, VGS= ±20V Gate-Body leakage current Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs Drain-Source Breakdown Voltage On state drain current ID=250uA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=13A Reverse Transfer Capacitance IF=13A, dI/dt=300A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev1: May. 2007 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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