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AO4720 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

No. de pieza AO4720
Descripción Electrónicos  N-Channel Enhancement Mode Field Effect Transistor
Download  4 Pages
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Fabricante Electrónico  AOSMD [Alpha & Omega Semiconductors]
Página de inicio  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4720 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AO4720 Datasheet HTML 1Page - Alpha & Omega Semiconductors AO4720 Datasheet HTML 2Page - Alpha & Omega Semiconductors AO4720 Datasheet HTML 3Page - Alpha & Omega Semiconductors AO4720 Datasheet HTML 4Page - Alpha & Omega Semiconductors  
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AO4720
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.1
TJ=125°C
20
IGSS
0.1
µA
VGS(th)
Gate Threshold Voltage
1.3
1.62
2
V
ID(ON)
120
A
9.3
11.0
TJ=125°C
13.8
17.3
14
17.5
m
gFS
37
S
VSD
0.40
0.5
V
IS
5A
Ciss
1267
1600
pF
Coss
308
pF
Crss
118
pF
Rg
1.3
2.0
Qg(10V)
21
30
nC
Qg(4.5V)
10.4
14
nC
Qgs
3.0
nC
Qgd
3.6
nC
tD(on)
5.2
ns
tr
3.8
ns
tD(off)
21.2
ns
tf
4.4
ns
trr
11.2
17
ns
Qrr
10.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
VGS=10V, VDS=15V, ID=13A
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
m
VGS=4.5V, ID=11A
IS=1A,VGS=0V
VDS=5V, ID=13A
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=VGS ID=250µA
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
Zero Gate Voltage Drain Current
mA
VDS=0V, VGS= ±20V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250uA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=13A
Reverse Transfer Capacitance
IF=13A, dI/dt=300A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev1: May. 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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