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IRF530NLPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF530NLPBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  10 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF530NLPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF530NS/LPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 9.0A, VGS = 0V
„
trr
Reverse Recovery Time
–––
93
140
ns
TJ = 25°C, IF = 9.0A
Qrr
Reverse Recovery Charge
–––
320 480
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
17
60
A
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 2.3mH
RG = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12)
ƒ ISD ≤ 9.0A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF530N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.11 –––
V/°C Reference to 25°C, ID = 1mA
‡
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
90
m
VGS = 10V, ID = 9.0A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
12
–––
–––
S
VDS = 50V, ID = 9.0A
„‡
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
37
ID = 9.0A
Qgs
Gate-to-Source Charge
–––
–––
7.2
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
11
VGS = 10V, See Fig. 6 and 13
‡
td(on)
Turn-On Delay Time
–––
9.2
–––
VDD = 50V
tr
Rise Time
–––
22
–––
ID = 9.0A
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 12Ω
tf
Fall Time
–––
25
–––
VGS = 10V, See Fig. 10
„‡
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
920
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
19
–––
pF
ƒ = 1.0MHz, See Fig. 5
‡
EAS
Single Pulse Avalanche Energy
‚‡
––– 340
… 93†
mJ
IAS = 9.0A, L = 2.3mH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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