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ML7XX16 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

No. de Pieza. ML7XX16
Descripción  MITSUBISHI LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE
Descarga  3 Pages
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Fabricante  MITSUBISHI [Mitsubishi Electric Semiconductor]
Página de inicio  http://www.mitsubishichips.com
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ML7XX16 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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ML7xx16 SERIES
TYPE
NAME
ML725B16F/ML720J16S/ML725J16F
MITSUBISHI LASER DIODES
2.5Gbps InGaAsP DFB LASER DIODE
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20ºC to 85ºC without any
temperature control.
FEATURES
2.5Gbps transmission
APPLICATION
ABSOLUTE MAXIMUM RATINGS
λ/4 phase shifted grating structure
High side-mode-suppression-ratio (typical 45dB)
Wide temperature range operation
(-20ºC to 85ºC )
High resonance frequency (typical 11GHz)
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Threshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
(perpendicular)
Side mode suppression ratio
Monitoring current (PD)
Rise and fall time(10%-90%)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Ith
CW
-10
15
mA
Iop
CW,Po=5mW
-
30
40
mA
V
Vop
CW,Po=5mW
1.1
1.8
λp
CW,Po=5mW,Tc=-20ºC~+85ºC
1310
nm
θ//
CW,Po=5mW
-
25
47
deg.
θ⊥
CW,Po=5mW,VRD=1V
-
11
-
20
-
SMSR
fr
2.48832Gbps, Ibias=Ith,Ipp=40mA
40
-
30
deg.
35
45
pF
Resonance frequency
tr,tf
2.0
mA
dB
150
GHz
1290
1330
-
Limits
mA
CW,Tc=85ºC
CW,Po=5mW,Tc=85ºC
η
CW,Po=5mW
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
Im
Id
Ct
Capacitance (PD)
VRD=5V
VRD=5V,f=1MHz
-
35
50
-
75
100
mA
mW/mA
0.25
0.18
-
CW,Po=5mW
100
-
psec
0.1
-
0.1
µA
CW,Po=5mW,Tc=-20ºC~+85ºC
-
-
10
-
Slope efficiency
Dark current (PD)
Symbol
Parameter
Conditions
Ratings
Unit
IF
Laser forward current
200
mA
VRL
Laser reverse voltage
-
2
V
Tc
Operation temperature
-
-20 ~+85
Tstg
Storage temperature
-
-40 ~+100
ºC
ºC
VRD
-
20
V
Po
Output power
CW
6
mW
PD reverse voltage
IRD
PD forward current
-
2
mA
-
MITSUBISHI
ELECTRIC
Jan. 2002


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