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MA4SW610B-1 Datasheet(PDF) 1 Page - Tyco Electronics |
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MA4SW610B-1 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 6 page Features n Ultra Broad Bandwidth: 2 GHz to 18 GHz n 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz n Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM’s HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved. SP6T PIN Diode Switch with Integrated Bias Network V 1.00 MA4SW510B-1 Layout Parameter Value Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C RF C.W. Incident Power (+/-20 mA) + 30 dBm Bias Current (Forward) +/- 40 mA Applied Voltage (Reverse) 15 V Absolute Maximum Ratings 1 @ TA = +25 °C (unless otherwise specified) 1. Exceeding any of these values may result in permanent damage Nominal Chip Dimensions Chip Dimensions ( µm) X Y Chip 3370 3120 Pad Dimensions ( µm) X Y RF 400 125 Pad Locations ( µm) X Y J1 0 0 J2 -1535 +300 J3 -1535 +1800 J4 -750 +2820 J5 +750 +2820 J6 +1535 +1800 Pad Locations Relative to J1 DC 125 125 B2 -1535 +1000 B3 -1535 +2500 B4 -50 +2820 B5 +1450 +2820 B6 +1535 +1100 J7 +1535 +300 B7 +900 0 |
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