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NE32500N Datasheet(PDF) 1 Page - California Eastern Labs

No. de pieza NE32500N
Descripción Electrónicos  C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
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Fabricante Electrónico  CEL [California Eastern Labs]
Página de inicio  http://www.cel.com
Logo CEL - California Eastern Labs

NE32500N Datasheet(HTML) 1 Page - California Eastern Labs

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FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: LG = 0.20 µ
µ
µ
µ
µm
• GATE WIDTH: WG = 200 µ
µ
µ
µ
µm
NEC's C TO KA BAND
SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ FET CHIP
NE32500
DESCRIPTION
NEC's NE32500 is a Hetero-Junction FET chip that uses the
junction between Si-doped AlGaAs and undoped InGaAs to
create very high mobility electrons. Its excellent low noise figure
and high associated gain make it suitable for commercial
systems and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
PART NUMBER
NE32500
PACKAGE OUTLINE
00 (Chip)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
0.45
0.55
GA
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
11.0
12.5
IDSS
Saturated Drain Current, VDS = 2 V,VGS = 0 V
mA
20
60
90
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5
10.0
VGS(off)
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA
V
-0.2
-0.7
-2.0
RTH (CH-C)
Thermal Resistance1 (Channel to Case)
°C/W
260
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note:
1. RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
California Eastern Laboratories
OUTLINE DIMENSIONS (Units in µm)
CHIP
49.5
43
25
13
76.5
350
100.5
89
25
21
13
25
5.5
36.5
13
25
66
58
38
68
60
46.5
350
Source
Source
Drain
Gate
66
Thickness = 140 µm
Bonding Area


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