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NX8567SA Datasheet(PDF) 1 Page - California Eastern Labs

No. de Pieza. NX8567SA
Descripción  EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS
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Fabricante  CEL [California Eastern Labs]
Página de inicio  http://www.cel.com
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NX8567SA Datasheet(HTML) 1 Page - California Eastern Labs

   
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NEC'S EA MODULATOR AND
WAVELENGTH MONITOR INTEGRATED
InGaAsP MQW DFB LASER DIODE
MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240,
360, 600 km DWDM APPLICATIONS
NX8567SA
Series
NEC's NX8567SA Series is an Electro-Absorption (EA) modu-
lator and wavelength monitor integrated, 1 550 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB)
laser diode module. The module is capable of 2.5 Gb/s ap-
plications of over 240 km, 360 km, 600 km ultralong-reach and
available for Dense Wavelength Division Multiplexing (DWDM)
wavelengths based on ITU-T recommendations, enabling a
wide range of applications
DESCRIPTION
• INTEGRATED ELECTROABSORPTION MODULATOR
• WAVELENGTH MONITOR FUNCTION
(Etalon Þlter, Wavelength monitor PD)
• VERY LOW DISPERSION PENALTY
NX8567SAS Series - over 240 km (4320 ps/nm)
NX8567SAM Series - over 360 km (6480 ps/nm)
NX8567SA Series - over 600 km (10800 ps/nm)
• LOW MODULATION VOLTAGE
• AVAILABLE FOR DWDM WAVELENGHT BASED ON
ITU-T RECOMMENDATION (50 GHz grid, refer to
ordering information)
FEATURES
California Eastern Laboratories
PART NUMBER
NX8567SA SERIES
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
TSET
Laser Set Temperature1
°C
20
35
IOP
Operating Current
mA
50
60
80
Vcenter
Modulation Center Voltage2
V
-2.0
-0.5
Vmod
Modulation Voltage2
V–
2
3
VFLD
Forward Voltage of LD, IFLD = IOP
V–
2.0
ITH
Threshold Current
mA
7
20
Pf
Optical Output Power from Fiber,
IFLD = IOP, Under modulation2
(NX8567SAM/SA Series)
dBm
-5
-2
IFLD = IOP, Under modulation2
(NX8567SAS Series)
0+1
λP
Peak Emission Wavelength, IFLD = IOP, VEA = 0 V
nm
1528
ITU-T3
1564
SMSR
Side Mode Suppression Ratio, IFLD = IOP, VEA = 0 V
dB
30
40
ER
Extinction Ratio, IFLD = IOP, Under modulation2
dB
10
11
tf
Rise Time, IFLD = IOP, 20-80%, Under modulation2
ps
125
tr
Rise Time, IFLD = IOP, 80-20%, Under modulation2
ps
125
ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, T
C = -5 to +70°C, unless otherwise speciÞed)
Notes:
1. Tset is a certain point between 20 and 35C for ITU-T grid wavelength
2. 2.48832 Gb/s, PRBS 223 -1, VEA = Vcenter ±1/2 Vmod, IFLD = Iop, TLD = Tset, NEC Test System
Vcenter
: a certain point between -2.0 and -0.5 V
Vmod
: a certain point 3 V or below
Iop
: a certain point between 50 and 80 mA
3. Available for DWDM wavelenght based on ITU-T recommendation (100 GHz grid). Please refer to ORDERING INFORMATION.
4. BER = 10-10, NX8567SAS: 240 km (4320 ps/nm)
BER = 10-10, NX8567SAM: 360 km (6480 ps/nm)
BER = 10-10, NX8567SA: 600 km (10800 ps/nm)


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