1997 Jul 14

3

Philips Semiconductors

Product specification

NPN general purpose transistor

PZTA06

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

mounting conditions, see

“Thermal considerations for SOT223 in the General part of handbook SC04”.

THERMAL CHARACTERISTICS

Note

mounting conditions, see

“Thermal considerations for SOT223 in the General part of handbook SC04”.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

80

V

collector-emitter voltage

open base

−

80

V

emitter-base voltage

open collector

−

4V

collector current (DC)

−

500

mA

peak collector current

−

800

mA

peak base current

−

200

mA

total power dissipation

−

1.2

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

103

K/W

thermal resistance from junction to soldering point

22

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

−

50

nA

emitter cut-off current

−

50

nA

DC current gain

100

−

100

−

collector-emitter saturation voltage

−

250

mV

base-emitter voltage

−

1.2

V

transition frequency

100

−

MHz